Temperature dependence on the growth and structure of carbon nanotubes by thermal chemical vapor deposition

열 CVD에 의한 탄소나노튜브 성장 및 구조의 온도의존성

  • 이태재 (군산대학교 전자정보공학부) ;
  • 류승철 (군산대학교 전자정보공학부) ;
  • 이철진 (군산대학교 전자정보공학부)
  • Published : 2001.07.01

Abstract

Vertically aligned carbon nanotubes are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition of acetylene gas at the temperature range 750∼950$^{\circ}C$. As the growth temperature increases from 750 to 950$^{\circ}C$, the growth rate increases by 4 times and the average diameter also increases from 30 nm to 130 nm while the density increases progresively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950$^{\circ}C$. This result demonstrates that the growth rate, diameter, density, and crystallinity of carbon nanotubes can be controlled with the growth temperature.

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