Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Electric Permittivity Properties and $ZnO/TiO_2$Thin Film Fabrication

$ZnO/TiO_2$ 박막 제작과 유전율 특성

  • 김창석 (조선대학교 공과대학 전기제어공학부) ;
  • 최창주 (조선대학교 공과대학 전기제어공학부) ;
  • 이우선 (조선대학교 공과대학 전기제어공학부) ;
  • 오무송 (조선대학교 전자정보공과대학 컴퓨터공학부) ;
  • 김태성 (전남대학교 명예교수) ;
  • 김병인 (송원대학 전기과)
  • Published : 2001.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

Keywords