Preparation of ZnO:Al transparent conductive film for Solar cell

태양전지용 ZnO:Al 투명전 도막의 제작

  • 양진석 (경원대학교 전기전자공학과) ;
  • 성하윤 (경원대학교 전기전자공학과) ;
  • 금민종 (경원대학교 전기전자공학과) ;
  • 신성권 (동해대학교 전기공학과) ;
  • 손인환 (신성대학 전기과) ;
  • 김경환 (경원대학교 전기전자공학과)
  • Published : 2001.07.01

Abstract

This detailed study of electrical, crystallographic and optical properties in Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets is described. Optimal transmittance and resistivity was obtained by controlling flow ratio of O$_2$gas. When the O$_2$ gas ratio of 0.25 and substrate temperature R.T., ZnO:Al thin film deposited had strongly oriented c-axis and the lower resistivity ( <10$\^$-4/ $\Omega$cm). The optical transmittance was above 80% in visible range.

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