Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Etching characteristics of holographic grating on chalcogenide As-Ge-Se-S thin films

칼코게나이드 As-Ge-Se-S 박막에서 홀로그래픽 격자의 에칭 특성

  • 박종화 (광운대학교 전자재료공학과) ;
  • 박정일 (광운대학교 전자재료공학과) ;
  • 나선웅 (광운대학교 전자재료공학과) ;
  • 손철호 (광운대학교 전자재료공학과) ;
  • 신경 (광운대학교 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2001.07.01
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Abstract

Amorphous As-Ge-Se-S thin films have been studied with the aim of identifying optimum etching condition which can be used to produce holographic grating structure for use as diffractive optical elements. In this study, holographic gratings have been formed using He-Ne laser(632.8nm), and fabricated by the method of wet etching using NaOH etchant with various concentration(0.26N, 0.33N, 0.40N). The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time. Over-etching resulted in under-cutting of the grating lines. The highest 1st order diffraction efficiency for these gratings was about 5.05%.

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