Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characterization of Silicon Structures with pn-junctions Fabricated by Modified Direct Bonding Technique with Simultaneous Dopant Diffusion

불순물 확산을 동시에 수행하는 수정된 직접접합방법으로 제작된 pn 접합 실리콘소자의 특성

  • 김상철 (한국전기연구원 전력반도체그룹) ;
  • 김은동 (한국전기연구원 전력반도체그룹) ;
  • 김남균 (한국전기연구원 전력반도체그룹) ;
  • 방욱 (한국전기연구원 전력반도체그룹) ;
  • Published : 2001.07.01
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Abstract

A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO$_3$)$_3$, Ga(NO$_3$)$_3$, HBO$_3$, or H$_3$PO$_4$. An essential improvement of bonding interface structural quality was detected and a model for the explanation is suggested. Diode, Dynistor, and BGGTO structures were fabricated and examined. Their switching characteristics are presented.

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