한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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대면적 플라즈마 소스에서의 ITO 식각균일도 향상

Improvement of 170 etching uniformity in a large area plasma source

  • 김진우 (인하대학교 정보통신공학부) ;
  • 조수범 (인하대학교 정보통신공학부) ;
  • 김봉주 (인하대학교 정보통신공학부) ;
  • 박세근 (인하대학교 정보통신공학부) ;
  • 오범환 (인하대학교 정보통신공학부)
  • 발행 : 2001.11.01
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초록

A large area plasma source using parallel 2x2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH$_4$ gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350x300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique.

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