Thermal Effect Modeling for AlGaN/GaN HFET on Various Substrate

AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링

In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate