한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

RF Magnetron Sputtering 법으로 층착된 AIN 박막의 특성

Characteristics of AIN thin film using RF Magnetron Sputtering

  • 조인호 (경북대학교 대학원 전자공학과) ;
  • 장철영 (경북대학교 대학원 전자공학과) ;
  • 고성용 (경북대학교 대학원 전자공학과) ;
  • 이용현 (경북대학교 전자전기컴퓨터 공학부)
  • 발행 : 2001.11.01
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초록

Aluminum nitride(AIN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AIN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200$^{\circ}C$ of substrate temperature and 15 mTorr of working Pressure. The leakage current density was less then 1.3${\times}$10$\^$-7/ A/$\textrm{cm}^2$. And it was also investigated the etching properties of deposited AIN thin films for application.

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