$\beta-SiC+39vol.%TiB_2$ 복합체의 전기저항률

Electrical Resistivity of the $\beta-SiC+39vol.%TiB_2$ Composites

  • 박미림 (원광대학교 전기전자 및 정보공학부) ;
  • 황철 (원광대학교 전기전자 및 정보공학부) ;
  • 신용덕 (원광대학교 전기전자 및 정보공학부) ;
  • 이동윤 (원광대학교 전기전자 및 정보공학부)
  • 발행 : 2001.05.11

초록

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

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