The Study for the CMP Automation with Nova Measurement System

NOVA System을 이용한 CMP Automation에 관한 연구

There are several factors causing re-work in CMP process such as improper polish time calculation by operator. removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistancy. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfact Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.