한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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- Pages.238-242
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- 2001
4H-SiC Recessed-gate MESFET의 DC특성 모델링 연구
Study on DC Analysis of 4H-SiC Recessed-Gate MESFETs using modeling tools
- 발행 : 2001.11.08
초록
In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitiations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA