Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of the photoinduced anisotropy(PA) in Ag/AsGeSeS multilayer thin films

Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성

  • 박종화 (광운대학교 전자재료공학과) ;
  • 나선웅 (광운대학교 전자재료공학과) ;
  • 여철호 (광운대학교 전자재료공학과) ;
  • 박정일 (광운대학교 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2001.11.08
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Abstract

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

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