A study on the properties of transparent conductive ZnO:Al films on variaton substrate temperature

기판온도 변화에 따른 ZnO:Al 투명 전도막의 특성 변화

  • 양진석 (경원대학교 전기전자공학과) ;
  • 성하윤 (경원대학교 전기전자공학과) ;
  • 금민종 (경원대학교 전기전자공학과) ;
  • 손인환 (신성대학 전기과) ;
  • 신성권 (동해대학교 전기과) ;
  • 김경환 (경원대학교 전기전자공학과)
  • Published : 2001.11.08

Abstract

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering(FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of $O_2$ gas and substrate temperature. When the $O_2$ gas rate of 0.3 and substrate temperature $200^{\circ}C$, ZnO:Al thin film had strongly oriented c-axis and lower resistivity( < $10^{-4}{\Omega}-cm$ ).

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