후속 열처리에 따른 $W/WN_{x}/poly$ $Sil_{-x}Ge_{x}$의 계면 반응 및 $W/WN_{x}/poly$ $Sil_{-x}Ge_{x}$ MOS Capacitor구조의 전기적 특성 분석

• 강성관 ;
• 김재진 ;
• 고대홍 ;
• 강한별 ;
• 양철웅 ;
• 안태항 ;
• 여인석 ;
• 이태완 ;
• 이영호

• Gang, Seong-Gwan (Yonsei Univ, Dept of Ceramic Eng.) ;
• Kim, Jae-Jin (Yonsei Univ, Dept of Ceramic Eng.) ;
• Go, Dae-Hong (Yonsei Univ, Dept of Ceramic Eng.) ;
• Gang, Han-Byeol (Sung kyun kwan univ. School of metallurgical and materials eng.) ;
• Yang, Cheol-Ung (Sung kyun kwan univ. School of metallurgical and materials eng.) ;
• An, Tae-Hang (Hyundai Electronics Industries Co. Ltd.) ;
• Yeo, In-Seok (Hyundai Electronics Industries Co. Ltd.) ;
• Lee, Tae-Wan (Ju-sung Co. Ltd.) ;
• Lee, Yeong-Ho (Ju-sung Co. Ltd.)

• 발행 : 2001.02.22

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