Pulsed DC 조건에서 반도체 배선의 electromigration 시뮬레이션 : 주파수, duty factor, 온도효과

Simulation of electromigration behavior on ULSI′s interconnect under pulsed DC stress : frequency, duty factor, temperature effect

Electromigration is atomic diffusion driven by a momentum transfer from conducting electrons. With every new generation of intergrated circuits, interconnect line widths have been reduced and current densities in the interconnect have become higher. This leads to an increase in the threat to interconnect reliability due to electromigration. In this paper, we simulated stress evolution with changing temperature, duty factor(ratio of on time and pulse time), frequency under pulsed DC condition. As a result, we predict MTF(median time to failure) and found that exponent n is affected by changing temperature, duty factor.