병렬분기 방법을 이용한 박막 나선 인덕터의 특성 향상

Enhanced Parallel-Branch Spiral Inductors

  • 서동우 (한국전자통신연구원 정보저장소자팀) ;
  • 민봉기 (한국전자통신연구원 정보저장소자팀) ;
  • 강진영 (한국전자통신연구원 정보저장소자팀) ;
  • 백문철 (한국전자통신연구원 정보저장소자팀)
  • 발행 : 2002.07.01

초록

In the present paper we suggested a parallel-branch structure of aluminum spiral inductor for the use of RF integrated circuit at 1∼3 GHz. The inductor was implemented on P-type silicon wafer (5∼15 Ω-cm) under the standard CMOS process and it showed a improved quality(Q) factor by more than 10% with no degradation of inductance. The effect of the structure modification on the Q factor and the inductance was scrutinized comparing with those of the conventional spiral inductors.

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