Film Bulk Acoustic Wave Resonator using surface micromachining

표면 마이크로머시닝을 이용한 압전 박막 공진기 제작

  • 김인태 (한국과학기술연구원(KIST) 마이크로시스템센터) ;
  • 박은권 (한국과학기술연구원(KIST) 마이크로시스템센터) ;
  • 이시형 (한국과학기술연구원(KIST) 마이크로시스템센터) ;
  • 이수현 (한국과학기술연구원(KIST) 마이크로시스템센터) ;
  • 이윤희 (한국과학기술연구원(KIST) 마이크로시스템센터)
  • Published : 2002.07.01

Abstract

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

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