한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

CMOS공정에 의한 SSIMT의 제작 및 특성

Fabrication and characteristics of SSIMT using a CMOS Process

  • 송윤귀 (부경대학교 전자공학과) ;
  • 임재환 (부경대학교 전자공학과) ;
  • 정귀상 (동서대학교 정보시스템공학부) ;
  • 김남호 (부경대학교 제어계측공학과) ;
  • 류지구 (부경대학교 전자공학과)
  • 발행 : 2002.07.01
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초록

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

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