Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of Organic Thin Film Transistors with Dual Layer Insulator on Plastic Substrates

이중 절연막 구조를 가전 플라스틱 유기 박막트랜지스터의 전기적 특성

  • 최승진 (한국항공대학교 항공재료공학과) ;
  • 이인규 (한국항공대학교 항공재료공학과) ;
  • 박성규 (전자부품연구원 디스플레이연구센터) ;
  • 김원근 (전자부품연구원 디스플레이연구센터) ;
  • 문대규 (전자부품연구원 디스플레이연구센터)
  • Published : 2002.07.01
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Abstract

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

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