SI(superconductor-insulator) Transitions in Bi-superconducting Mixed Crystal Thin Films

  • Park, No-Bong (Dept. of Electrical Engineering, Chungju National University) ;
  • Yang, Sung-Ho (Department of Electrical & Electronic Eng., Dongshin University) ;
  • Park, Yong-Pil (Department of Electrical & Electronic Eng., Dongshin University)
  • 발행 : 2002.07.01

초록

Temperature(T) dependence of the sheet resistance( $R_{$\square$}$) has been investigated on the c-axis oriented thin films of the (Bi2212/Bi2201) mixed crystal with different molar fractions. The $R_{$\square$}$-T superconducting characteristic deteriorated with reduction of the Bi2212 fraction, and almost disappears at 48 mol% where a superconductor-to-insulator transition took place, with the resistance on the normal state, RN, reaching 4.l㏀ at 80 K. This $R_{N}$ value is close to the universal quantum number, h/(2e)$^2$≡6.5㏀ predicted by the Kosterlitz-Thouless(KT) transition theory. The $R_{$\square$}$-T characteristics of the 48 mol% thin film can be elucidated as a competitive process of KT transition brought about by charge or vortex in the two-dimensional layer structure.e.

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