Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Influence of metal annealing deposited on oxide layer

  • Kim, Eung-Soo (Division of Computer and Electronics Engineering, Pusan University of foreign Studies) ;
  • Cho, Won-Ju (Nano Scale Electronic Device Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Kwon, Hyuk-Choon (Department of Electronics Engineering, Kyungpook National University) ;
  • Kang, Shin-Won (School of Electronic and Electrical Engineering, Kyungpook National University)
  • Published : 2002.07.01
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Abstract

We investigated the influence of RTP annealing of multi-layered metal films deposited on oxides layer. Two types of oxides, BPSG and P-7205, were used as a bottom layer under multi-layered metal film. The bonding was not good in metal/BPSG/Si samples because adhesion between metal layer and BPSG oxide layer was poor by interfacial reaction during RTP annealing above 650$^{\circ}C$. On the other hand bonding was always good in metal/ P-TEOS /Si samples regardless of annealing temperature. We observed the interface between oxide and metal layers using AES and TEM. The phosphorus and oxygen profile in interface between metal and oxide layers were different in metal/BPSG/Si and metal/P-TEOS/Si samples. We have known that the properties of interface was improved in metal/BPSG/Si samples when the sample was annealed below 650$^{\circ}C$.

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