한국정보통신학회:학술대회논문집 (Proceedings of the Korean Institute of Information and Commucation Sciences Conference)

한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지

IBS법에 의한 BSCCO 박막의 에피택셜 성장

Epitaxial Growth of BSCCO Films by IBS Method

  • 양승호 (동신대학교 전기전자정보통신공학부) ;
  • 박용필 (동신대학교 전기전자정보통신공학부)
  • 발행 : 2002.05.01
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초록

Bi$_2$Sr$_2$CuOx(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bean sputtering method. 10 wt% and 90 wt% ozone mired with oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.

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