Tunneling Magnetoresistance of a Ramp Edge Junction with $SrTiO_3$ Barrier Layer

$SrTiO_3$ 장벽층을 이용한 경사형 모서리 접합의 터널링 자기저항 특성연구

A ramp-type tunneling magnetoresistance (TMR) junction having structure NiO(60 nm)/pinned Co(10 nm)MiO(60 nm)/barrier SrTiO$_3$(2-10 nm)/free NiFe(10 nm) with the 15 degree slope was investigated. We obtained nonlinear I(V) characteristics for ramp-type tunneling junctions that have distinctive difference with and without applied magnetic field. In the barrier SrTiO$_3$ thickness of 4 nm, the TMR was about 52% at a bias voltage of 50 mV. (omitted)