한국정보처리학회:학술대회논문집 (Proceedings of the Korea Information Processing Society Conference)

한국정보처리학회 (Korea Information Processing Society)
권호 표지

MOSFET의 험프 특성에 관한 연구

A Study on the Hump Characteristics of the MOSFETs

  • Kim, Hyeon-Ho (Dept of Electronic Information, Chungbuk Provincial University of Science & Technology) ;
  • Lee, Yong-Hui (Dept of Computer Application, Shinsung College) ;
  • Yi, Jae-Young (Technical Univ. of Budapest) ;
  • Yi, Cheon-Hee (Dept of Electronic Engineering, Cheong-ju University)
  • 발행 : 2002.04.12
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초록

In this paper we improved that hump occurrence by increased oxidation thickness, and control field oxide recess$(\leq20nm)$, wet oxidation etch time(19HF, 30sec), STI nitride wet cleaning time(99 HF, 60sec + P 90min) and gate pre-oxidation cleaning time(U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

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