한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.147-152
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- 2002
Theory of Charged Clusters as New Understanding of Thin Film Growth
- Hwang, Nong-Moon (Center for Microstructure Science of Materials, School Mater. Sci. & Eng. Seoul National University, Korea Research Institute of Standards and Science) ;
- Kim, Doh-Yeon (Center for Microstructure Science of Materials, School Mater. Sci. & Eng. Seoul National University)
- Published : 2002.08.21
Abstract
A new theory of thin film growth was suggested, where charged clusters of nanometer size are generated in the gas phase and are a major flux for thin films. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in metal evaporation. These results imply new insights as to the microstructure control of thin films. Based on this new understanding, the low temperature deposition of crystalline and amorphous silicon can be approached systematically.
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