X-X: Single-Crystalline Si TFTs Fabricated with ${\mu}-Czochralski$ (grain-filter) process

  • Ishihara, R. (DIMES-ECTM, Delft Univ. of Technol.) ;
  • Dijk, B.D.van (DIMES-ECTM, Delft Univ. of Technol.) ;
  • Wilt, P.Ch. van der (DIMES-ECTM, Delft Univ. of Technol.) ;
  • Metselaar, J.W. (DIMES-ECTM, Delft Univ. of Technol.) ;
  • Beenakker, C.I.M. (DIMES-ECTM, Delft Univ. of Technol.)
  • 발행 : 2002.08.21


This paper reviews an advanced excimer-laser crystallization technique enabling precise location-control of the individual grains. With the developed ${\mu}$-Czochralski (grain-filter) process, the large grains having a diameter of 6 ${\mu}m$ can be set precisely at predetermined positions. We will also discuss the performance of the single-crystalline Si TFTs that are formed within the location-controlled Si grains. The field-effect mobility for electrons is 430 $cm^2/Vs$ on average, which is well comparable to that of TFTs made with silicon-on-insulator wafers.