한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.171-174
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- 2002
Activation for Boron Doped poly-Si films by Hydrogen doping
- Yang, Joon-Young (R&D Center, LG.Philips LCD Inc.) ;
- Yu, S.H. (R&D Center, LG.Philips LCD Inc.) ;
- Oh, K.M. (R&D Center, LG.Philips LCD Inc.) ;
- Kim, J.I. (R&D Center, LG.Philips LCD Inc.) ;
- Yang, M.S. (R&D Center, LG.Philips LCD Inc.)
- Published : 2002.08.21
Abstract
When boron ions are doped into the poly-Si films, the hydrogen ions doped with boron ions compensate the defect sites and suppress to produce damage density. These samples can be easily activated by hydrogen doping at high acceleration voltage(
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