Activation for Boron Doped poly-Si films by Hydrogen doping

  • Yang, Joon-Young (R&D Center, LG.Philips LCD Inc.) ;
  • Yu, S.H. (R&D Center, LG.Philips LCD Inc.) ;
  • Oh, K.M. (R&D Center, LG.Philips LCD Inc.) ;
  • Kim, J.I. (R&D Center, LG.Philips LCD Inc.) ;
  • Yang, M.S. (R&D Center, LG.Philips LCD Inc.)
  • 발행 : 2002.08.21

초록

When boron ions are doped into the poly-Si films, the hydrogen ions doped with boron ions compensate the defect sites and suppress to produce damage density. These samples can be easily activated by hydrogen doping at high acceleration voltage($V_{acc}$).

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