한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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- Pages.177-180
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- 2002
Microwave-Enhanced Low-Temperature Crystallization of Amorphous Silicon Films for TFTs
- Ahn, Jin-Hyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Eom, Ji-Hye (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
- Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
- 발행 : 2002.08.21
초록
Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.
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