Microwave-Enhanced Low-Temperature Crystallization of Amorphous Silicon Films for TFTs

  • Ahn, Jin-Hyung (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Eom, Ji-Hye (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 발행 : 2002.08.21

초록

Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.

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