한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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High temperature poly-Si thin film transistors on a molybdenum substrate

  • Kim, Do-Young (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Gangopadhyay, Utpal (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Park, Joong-Hyun (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Ko, Jae-Kyung (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Yi, Jun-Sin (New material Lab., School of Information and Communication Engineering, SungKyunKwan University)
  • Published : 2002.08.21
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Abstract

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.

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