Microcrystalline Silicon Film Growth on a Fluoride Film Coated Glass Substrate

  • Kim, Do-Young (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Park, Joong-Hyun (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Ahn, Byung-Jae (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Yoo, Jin-Su (New material Lab., School of Information and Communication Engineering, SungKyunKwan University) ;
  • Yi, Jun-Sin (New material Lab., School of Information and Communication Engineering, SungKyunKwan University)
  • 발행 : 2002.08.21

초록

Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

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