New Material Architecture and Its Process Integration for a-Si TFT Array Manufacturing

  • Song, Jean-Ho (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Park, Hong-Sick (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Kim, Sang-Gab (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Cho, Hong-Je (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Jeong, Chang-Oh (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Kang, Sung-Chul (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Kim, Chi-Woo (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.) ;
  • Chung, Kyu-Ha (AMLCD Division, Device Solution Network, Samsung Electronics Co. Ltd.)
  • 발행 : 2002.08.21

초록

In order to achieve higher performance and low cost a-Si TFT-LCD panel, new material architecture and its process integration for a-Si TFT array manufacturing method were developed. Material combination of low resistant dry-etchable metal and new pixel electrode under currently adopted 4 mask process made it possible to get more-simplified manufacturing method and better device performance for the a-Si TFT-LCD application. Proposed 4 mask process architecture with optimized wet etchants and dry etching process was applicable to various devices such as notebook, monitor and TV.

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