한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Fabrication and Electrical Characteristics of a Lateral type GaN Field Emission Diode

  • Lee, Jae-Hoon (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Hyung-Ju (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Myoung-Bok (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Choi, Kue-Man (Reseach Institute of Electronic and Telecommunication Technologies, Kwandong University)
  • 발행 : 2002.08.21
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초록

A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for 7 ${\mu}m$ gap and an emission current of ${\sim}580$ nA/10tips at anode-to-cathode voltage of 100 V These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance.

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