Effects of indium tin oxide top electrode formation conditions on the characteristics of the top emission inverted organic light emitting diodes

  • Kho, Sam-Il (Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University) ;
  • Cho, Dae-Yong (Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University) ;
  • Jung, Dong-Geun (Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University)
  • Published : 2002.08.21

Abstract

Indium tin oxide (ITO) was used as the top anode of top emission inverted organic light emitting diodes (TEIOLEDs). TEIOLEDs were fabricated by deposition of an aluminum bottom cathode, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4 1'-diamine (TPD) hole transport layer, a tris-8-hydroxyquinoline aluminum ($Alq_3$) emission layer, and an ITO top anode sequentially. ITO was deposited by r.f. magnetron sputtering without $O_2$ flow during the deposition. After the deposition, the deposited ITO layer was kept under oxygen atmosphere for the oxidation. The characteristics of the TEOILED were affected significantly by the post-deposition oxidation condition.

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