Study on Characteristics of Organic Thin Film Transistors with Rubbed Organic Gate Insulators

  • Lee, Jong-Hyuk (Dept. of Electrical & Control Engineering, Hongik University) ;
  • Kang, Chang-Heon (Dept. of Electrical & Control Engineering, Hongik University) ;
  • Choi, Jong-Sun (Dept. of Electrical & Control Engineering, Hongik University) ;
  • Lee, Sin-Doo (School of Electrical Engineering, Seoul National University)
  • Published : 2002.08.21

Abstract

In this work, the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulators have been studied. For the surface treatment, the simple rubbing technique was used. The field effect mobilities of the devices with PVP gate insulator was improved about four times as high as those of TFTs without the insulator surface treatment.

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