한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Transparent Conducting ZnO:$Ga_2O_3$ Thin Films Grown by r.f. Magnetron Sputtering

  • Lee, Yong-Eui (Basic Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Yun, Sun-Jin (Basic Research Laboratory, Electronics and Telecommunications Research Institute)
  • 발행 : 2002.08.21
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초록

Transparent conducting ZnO:$Ga_2O_3$ thin films were deposited on glass substrates using rf magnetron sputtering method. The ZnO:$Ga_2O_3$ thin films were highly c-axis oriented normal to the substrates and had smooth surface features. The sheet resistance of the films was 2.8-6.4 ${\Omega}/{\square}$ at the growth temperature ranging from 25 to 30$^{\circ}C$.

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