한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
권호 표지

Electrical properties of the Porous polycrystalline silicon Nano-Structure as a cold cathode field emitter

  • Lee, Joo-Won (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology) ;
  • Kim, Hoon (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology) ;
  • Lee, Yun-Hi (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology) ;
  • Jang, Jin (Department of Physics, Kyung-hee University) ;
  • Oh, Myung-Hwan (Department of Electrical Engineering, Dan-kook University) ;
  • Ju, Byung-Kwon (L6320, Display and Nano-devices Laboratory, Korea Institute of Science and Technology)
  • 발행 : 2002.08.21
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초록

The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

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