한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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- Pages.18-22
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- 2002
희석된 슬러리가 CMP 특성에 미치는 영향
The Effects of Diluted Slurry on the CMP Characteristics
- 박창준 (대불대학교 전기공학과) ;
- 박성우 (대불대학교 전기공학과) ;
- 이경진 (대불대학교 전기공학과) ;
- 김기욱 (대불대학교 전기공학과) ;
- 정소영 (대불대학교 전기공학과) ;
- 김철복 (대불대학교 전기공학과) ;
-
최운식
(대불대학교 전기공학과)
;
- 김상용 (아남반도체 FAB 사업부) ;
- 서용진 (대불대학교 전기공학과)
- Park, Chang-Jun ;
- Park, Sung-Woo ;
- Lee, Kyoung-Jin ;
- Kim, Ki-Wook ;
- Jeong, So-Young ;
- Kim, Chul-Bok ;
-
Choi, Woon-Shik
;
- Kim, Sang-Yong ;
- Seo, Yong-Jin
- 발행 : 2002.05.17
초록
CMP(chemical mechanical polishing) process has attracted as an essential technology of multilevel interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused that it has how to reduce the consumption of raw slurry. In this paper, we presented the pH changes of diluted slurry and pH control as a function of KOH contents. Also, the removal rates of slurry with different dilution ratio was investigated. Finally, CMP the characteristics as a function of silica(