Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation on the P3HT-based Organic Thin Film Transistors

P3HT를 이용한 유기 박막 트랜지스터에 관한 연구

  • 김영훈 (전자부품연구원 디스플레이연구센터) ;
  • 박성규 (전자부품연구원 디스플레이연구센터) ;
  • 한정인 (전자부품연구원 디스플레이연구센터) ;
  • 문대규 (전자부품연구원 디스플레이연구센터) ;
  • 김원근 (전자부품연구원 디스플레이연구센터) ;
  • 이찬재 (전자부품연구원 디스플레이연구센터)
  • Published : 2002.04.27
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Abstract

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

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