한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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- Pages.132-135
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- 2002
CoZrNb 막을 이용한 MI센서 제작 및 특성
Fabrication and Properties of MI Sensor using CoZrNb films
- Hur, J. (Dong-a Uni.) ;
- Kim, Y.H. (Pukyong Uni.) ;
- Shin, K.H. (Kyungsung Uni.) ;
- SaGong, G. (Dong-a Uni.)
- 발행 : 2002.11.07
초록
MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(