Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Dopant dependence in Ni-Silicide for Sub-l00 nm CMOS Technology

100nm 이하 CMOS 소자의 Source/Drain dopant 종류에 따른 Nickel silicide의 특성분석

  • Bae, Mi-Suk (Dept. of electronics Engineering, Chungnam National University) ;
  • Kim, Yong-Goo (Dept. of electronics Engineering, Chungnam National University) ;
  • Ji, Hee-Hwan (Dept. of electronics Engineering, Chungnam National University) ;
  • Lee, Hun-Jin (Dept. of electronics Engineering, Chungnam National University) ;
  • Oh, Soon-Young (Dept. of electronics Engineering, Chungnam National University) ;
  • Yun, Jang-Gn (Dept. of electronics Engineering, Chungnam National University) ;
  • Park, Sung-Hyung (Hynix semiconductor Inc. System IC R&D Division) ;
  • Wang, Jin-Suk (Dept. of electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Dept. of electronics Engineering, Chungnam National University)
  • 배미숙 (충남대학교 전자공학과) ;
  • 김용구 (충남대학교 전자공학과) ;
  • 지희환 (충남대학교 전자공학과) ;
  • 이헌진 (충남대학교 전자공학과) ;
  • 오순영 (충남대학교 전자공학과) ;
  • 윤장근 (충남대학교 전자공학과) ;
  • 박성형 ((주) 하이닉스 반도체 System IC Logic 소자 개발팀) ;
  • 왕진석 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과)
  • Published : 2002.11.07
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Abstract

In this paper, the dependence of Ni-silicide properties such as sheet resistance and cross-sectional profile on the dopants have been characterized. There was little dependence of sheet resistance on the used dopants such as As, P, $BF_{2}$ and $B_{11}$ just after RTP (Rapid Thermal Process). However, the silicide properties showed strong dependence on the dopants when thermal treatment was applied after formation of Ni-silicide. $BF_{2}$ implanted sample shows the best stable property, while $B_{11}$ implanted one was thermally unstable. The main reason of the excellent property of $BF_{2}$ sample is believed to be the retardation of Ni diffusion by the flourine.

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