Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The effects of Mo doping on Electrical Properties of $BiNbO_{4}$ Ceramic Thick Film Monopole Antenna

Mo 치환한 $BiNbO_{4}$ 세라믹 후막 모노폴 안테나의 전기적 특성

  • Seo, Won-Kyung (School of Materials Science and Engineering, University of Ulsan) ;
  • Ahn, Sung-Hun (School of Electrical Engineering, University of Ulsan) ;
  • Jung, Chun-Suk (School of Electrical Engineering, University of Ulsan) ;
  • Lee, Jae-Shin (School of Materials Science and Engineering, University of Ulsan)
  • 서원경 (울산대학교 첨단소재공학부) ;
  • 안성훈 (울산대학교 전기전자정보시스템공학부) ;
  • 정천석 (울산대학교 전기전자정보시스템공학부) ;
  • 이재신 (울산대학교 첨단소재공학부)
  • Published : 2002.11.07
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Abstract

We fabricated thick film monopole antennas using Mo-doped $BiNbO_{4}$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped $BiNbO_{4}$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of $Bi_{2}MoO_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at%, highest gain of ~0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

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