Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

2002.11a
/
Pages.370-374
/
2002

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)

권호 표지

Properties of magneto-resistance by annealing using by co-sputtering method

Co-sputtering 법으로 제조한 Insb 박막의 후열처리기술에 의한 자기저항 특성

Kim, Tae-Hyong (Wonkwang Uni.) ;
So, Byung-Moon (Iksan college) ;
Song, Min-Jong (Kwangju Health College) ;
Baek, Choon-Bae (Wonkwang Uni.)

김태형 (원광대학교) ;
소병문 (익산대학) ;
송민종 (광주보건대학) ;
박춘배 (원광대학교)

Published : 2002.11.07

PDF

⟨ Previous Next ⟩

Abstract

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

Keywords