Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Charge Transport Characteristics of a-Se based X-ray Detector

비정질 셀레늄 기반의 X선 검출 센서의 전하 수송 특성

  • Kang, Sang-Sik (Department of Biomedical Engineering of Inje University) ;
  • Cha, Byung-Youl (Department of Biomedical Engineering of Inje University) ;
  • Jang, Gi-Won (Department of Biomedical Engineering of Inje University) ;
  • Kim, Jae-Hyung (Medical Imageing Research center of Inje University) ;
  • Nam, Sang-Hee (Medical Imageing Research center of Inje University)
  • Published : 2002.11.07
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Abstract

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.

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