Temperature dependence of tunnel magnetoresistance of IrMn based MTJ

  • Stobiecki T. (Department of Electronics, AGH University of Science and Technology) ;
  • Wisniowski P. (Department of Electronics, AGH University of Science and Technology) ;
  • Czapkiewicz M. (Department of Electronics, AGH University of Science and Technology) ;
  • Kim C. G. (Department of Materials Engineering, Chungnam National University) ;
  • Kim C. O. (Department of Materials Engineering, Chungnam National University) ;
  • Hu Y. K. (Department of Materials Engineering, Chungnam National University) ;
  • Tsunoda M. (Department of Electronic Engineering, Tohoku University) ;
  • Takahashi M. (Department of Electronic Engineering, Tohoku University)
  • Published : 2003.12.01