Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)

  • 2003.06a
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  • Pages.154-155
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  • 2003
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  • 2233-9485(pISSN)
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  • 2233-9574(eISSN)
The Korean Magnetics Society (한국자기학회)
권호 표지

Magnetoresistance and Hall coefficient in $V_xGe_{l-x}$ single crystal

VGe 단결정의 자기저항과 홀 계수

  • Park, Jiyoun (Depertment of Physics, University of Ulsan) ;
  • Park, Sungyoul (Depertment of Physics, University of Ulsan) ;
  • Park, Jeongyong (Depertment of Physics, University of Ulsan) ;
  • Hong, Soon-Cheol (Depertment of Physics, University of Ulsan) ;
  • Sunglae Cho (Depertment of Physics, University of Ulsan) ;
  • Park, Yongsup (Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Lee, Gu-Won (Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Park, Hyun-Min (Materials Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Kim, Y. C. (Department of physics, Pusan National University)
  • Published : 2003.06.01
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Abstract

Substituting transition metals such as V, Cr, Mn, Fe, Co and Ni into semiconductors have been of interest because of its unique electrical and magnetic properties. It was reported that the magnetoresistance(MR) ratio of CrGe was 1.7% and 1 4% at 120 K in fields of 0.5 and 5 T, respectively. The MR ratio of FeGe was 19% at 180K. The electrical resistivity of CrGe changed according to Cr concentration. In this talk, we report transport properties of V-doped Ge single crystals with several different V concentrations. The carrier densities and mobilities will be determined from Hall measurement.

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