100GHz 이상의 밀리미터파 HEMT 소 제작 및 개발을 위한 GaAs기반 0.1$\mu\textrm{m}$ $\Gamma$-게이트MHEMT의 DC/RF 특성에 대한 calibration 연구

A Study on the Calibration of GaAs-based 0.1-$\mu\textrm{m}$ $\Gamma$-gate MHEMT DC/RF Characteristics for the Development and Fabrication of over-100-GHz Millimeter-wave HEMT devices

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.