A Parameter Extraction Method for BJT Gummel-Poon Model

BJT Gummel-Poon 모델 파라미터 추출 방법

  • 윤신섭 (한국외국어대학교 전자정보공학과 전자공학전공) ;
  • 이성현 (한국외국어대학교 전자정보공학과 전자공학전공)
  • Published : 2003.07.01

Abstract

A direct parameter extraction method using several two-port parameter equations derived in cutoff and active bias modes has been studied to obtain an accurate Gummel-Poon BJT model. First, dc model parameters were extracted from slopes and y-axis intercepts of I-V curve and Gummel plot. The pad capacitances and junction capacitance parameters were determined by using measured S-parameter sets in the cutoff bias. The resistance and transit time parameters were extracted by using measured S-parameter sets in the active bias.

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