대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
- /
- Pages.309-312
- /
- 2003
Symmetric high voltage MOSFET의 extended source/drain 길이에 따른 전기적 특성의 고온영역 신뢰성 분석
A study on the reliability test of Symmetric high voltage MOSFET under the extended source/drain length
초록
In this study, the electrical characteristic of Symmetric high voltage MOSFET (SHVMOSFET) for display driver IC were investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length. In high temperature condition(>400K), drain current decreased over 20%, and specific on-resistance increased over 30% in comparison with room temperature.
키워드