Design and Fabrication of Side-illuminated p-i-n Photodetectors with High Responsivity and Coupling Tolerance

높은 Responsivity와 광결합 공차를 가지는 면입사형 p-i-n 광검출소자의 설계 및 제작

  • 이도영 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 Lab) ;
  • 강화영 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 La) ;
  • 전병옥 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 La) ;
  • 양승기 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 La) ;
  • 이은화 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 La) ;
  • 김태진 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 La) ;
  • 장동훈 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 La) ;
  • 김태일 (삼성전자 TN총괄 통신연구소 N/W연구팀 광전자 Lab)
  • Published : 2003.07.01

Abstract

We have fabricated a side-illuminated p-i-n photodetectors with evanescently-coupled waveguides for surface hybrid integration in low-cost modules. We adopted WGPD of evanescently-coupled type to have high responsivity and coupling tolerance, and to avoid any reliability problem. This proposed photodetectors have a high responsivity of 1.10 A/W at a wavelength of 1.55 ${\mu}{\textrm}{m}$. The 1dB coupling tolerance to cleaved fiber and photodetectors is $\pm$3.5 ${\mu}{\textrm}{m}$ in the vertical direction and $\pm$11 ${\mu}{\textrm}{m}$ in the horizontal direction.

Keywords